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R6008FNX

R6008FNX

MOSFET N-CH 600V 8A TO-220FM

R6008FNX

R6008FNX

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Part No :

R6008FNX

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 600V 8A TO-220FM
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10777 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
R6008FNX PDF
Type Description
Series:*
Package:BulkBulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:580 pF @ 25 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FM
Package / Case:TO-220-3 Full Pack
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