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SIE882DF-T1-GE3

SIE882DF-T1-GE3

MOSFET N-CH 25V 60A 10POLARPAK

XC6122C540ER-G

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IC SUPERVISOR 1 CHANNEL 6USPC

SIE882DF-T1-GE3

SIE882DF-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SIE882DF-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 25V 60A 10POLARPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12975 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
SIE882DF-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:145 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6400 pF @ 12.5 V
FET Feature:-
Power Dissipation (Max):5.2W (Ta), 125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:10-PolarPAK® (L)
Package / Case:10-PolarPAK® (L)
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