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IPW65R110CFDFKSA2

IPW65R110CFDFKSA2

MOSFET N-CH 650V 31.2A TO247-3

IPW65R110CFDFKSA2

IPW65R110CFDFKSA2

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Part No :

IPW65R110CFDFKSA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 31.2A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
736773 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
Type Description
Series:CoolMOS™ CFD2
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs:118 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3240 pF @ 100 V
FET Feature:-
Power Dissipation (Max):277.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-41
Package / Case:TO-247-3
IPW65R110CFDFKSA2 is available at GangBo-ic.com, Please review product page below for detailed information, including IPW65R110CFDFKSA2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPW65R110CFDFKSA2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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