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FQP10N20C

FQP10N20C

MOSFET N-CH 200V 9.5A TO220-3

FQP10N20C

FQP10N20C

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Part No :

FQP10N20C

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 200V 9.5A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10261 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
FQP10N20C PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:510 pF @ 25 V
FET Feature:-
Power Dissipation (Max):72W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FQP10N20C is available at GangBo-ic.com, Please review product page below for detailed information, including FQP10N20C price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQP10N20C to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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