N-CHANNEL POWER MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FQA10N80C-F109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 10A TO3P |
|
IRFP254BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SCH1335-TL-HRochester Electronics |
MOSFET P-CH 12V 2.5A 6SCH |
|
R5009FNJTLROHM Semiconductor |
MOSFET N-CH 500V 9A LPTS |
|
IXTF200N10TWickmann / Littelfuse |
MOSFET N-CH 100V 90A I4PAC |
|
TK110U65Z,RQToshiba Electronic Devices and Storage Corporation |
DTMOS VI TOLL PD=190W F=1MHZ |
|
NTP8G206NGRochester Electronics |
GANFET N-CH 600V 17A TO220-3 |
|
SIHB18N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 18A TO263 |
|
AOT270ALAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 75V 21.5A/140A TO220 |
|
RM8N700TIRectron USA |
MOSFET N-CHANNEL 700V 8A TO220F |
|
TPH1400ANH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 100V 24A 8-SOP |
|
IRLR8729TRLPBFRochester Electronics |
IRLR8729 - 20V-30V N-CHANNEL |
|
FDB8160Rochester Electronics |
MOSFET N-CH 30V 80A D2PAK |