MOSFET P-CH 12V 2.5A 6SCH
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12 V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 112mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | 3.1 nC @ 4.5 V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 270 pF @ 6 V |
FET Feature: | - |
Power Dissipation (Max): | 800mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-SCH |
Package / Case: | SOT-563, SOT-666 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
R5009FNJTLROHM Semiconductor |
MOSFET N-CH 500V 9A LPTS |
|
IXTF200N10TWickmann / Littelfuse |
MOSFET N-CH 100V 90A I4PAC |
|
TK110U65Z,RQToshiba Electronic Devices and Storage Corporation |
DTMOS VI TOLL PD=190W F=1MHZ |
|
NTP8G206NGRochester Electronics |
GANFET N-CH 600V 17A TO220-3 |
|
SIHB18N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 18A TO263 |
|
AOT270ALAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 75V 21.5A/140A TO220 |
|
RM8N700TIRectron USA |
MOSFET N-CHANNEL 700V 8A TO220F |
|
TPH1400ANH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 100V 24A 8-SOP |
|
IRLR8729TRLPBFRochester Electronics |
IRLR8729 - 20V-30V N-CHANNEL |
|
FDB8160Rochester Electronics |
MOSFET N-CH 30V 80A D2PAK |
|
NTF3055-100T1G-IRH1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |
|
SQJ142ELP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 175A PPAK SO-8 |
|
CMPDM202PH TRCentral Semiconductor |
MOSFET P-CH 20V 2.3A SOT-23F |