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IPN65R1K5CEATMA1

IPN65R1K5CEATMA1

MOSFET N-CH 650V 5.2A SOT223

IPN65R1K5CEATMA1

IPN65R1K5CEATMA1

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Part No :

IPN65R1K5CEATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 5.2A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Availability
946694 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 27 - Dec 31 2024
PDF
IPN65R1K5CEATMA1 PDF
Type Description
Series:CoolMOS™ CE
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 100 V
FET Feature:-
Power Dissipation (Max):5W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:TO-261-3
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