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MPXV1D0630L100

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FIXED IND 10UH 4.2A 78 MOHM SMD

IPN65R1K5CEATMA1

IPN65R1K5CEATMA1

MOSFET N-CH 650V 5.2A SOT223

IPN65R1K5CEATMA1

IPN65R1K5CEATMA1

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Part No :

IPN65R1K5CEATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 5.2A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Availability
946694 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IPN65R1K5CEATMA1 PDF
Type Description
Series:CoolMOS™ CE
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 100 V
FET Feature:-
Power Dissipation (Max):5W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:TO-261-3
IPN65R1K5CEATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPN65R1K5CEATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPN65R1K5CEATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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