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IPD80R2K8CEATMA1

IPD80R2K8CEATMA1

MOSFET N-CH 800V 1.9A TO252-3

E39-F3R

E39-F3R

TRANSPARENT FILM DET LENS UNIT

IPD80R2K8CEATMA1

IPD80R2K8CEATMA1

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Part No :

IPD80R2K8CEATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 800V 1.9A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
066706 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
IPD80R2K8CEATMA1 PDF
Type Description
Series:CoolMOS™ CE
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.8Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 100 V
FET Feature:-
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD80R2K8CEATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD80R2K8CEATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD80R2K8CEATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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