SMPS HEXFET POWER MOSFET
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 7mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 42 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3.1 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFR120ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 8.7A DPAK |
|
SUD35N10-26P-E3Vishay / Siliconix |
MOSFET N-CH 100V 35A TO252 |
|
APT20M20B2FLLGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 100A T-MAX |
|
BSP129L6327Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDMS3600SRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
SPB02N60C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD12CN10NGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 67A TO252-3 |
|
IRFR120TRLPBFVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
NTB30N06Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHP33N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 33A TO220AB |
|
APT12080JVFRRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 15A ISOTOP |
|
AOWF380A60CAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO262F |
|
STFU24N60M2STMicroelectronics |
MOSFET N-CH 600V 18A TO220FP |