MOSFET N-CH 20V 1.5A TUMT3
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 180mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 2.5 nC @ 4.5 V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 110 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 800mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TUMT3 |
Package / Case: | 3-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FCA36N60NFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 34.9A TO3PN |
|
SI1013R-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 350MA SC75A |
|
R6011END3TL1ROHM Semiconductor |
MOSFET N-CH 600V 11A TO252 |
|
FDP51N25Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 51A TO220-3 |
|
STW33N60M6STMicroelectronics |
MOSFET N-CH 600V TO247 |
|
FQI4N20Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT5010JLLU2Roving Networks / Microchip Technology |
MOSFET N-CH 500V 41A SOT227 |
|
BUZ41ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQJ460AEP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 32A PPAK SO-8 |
|
DMP21D6UFD-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 600MA 3DFN |
|
IRF624PBF-BE3Vishay / Siliconix |
MOSFET N-CH 250V 4.4A TO220AB |
|
BUK7606-55A,118Rochester Electronics |
MOSFET N-CH 55V 75A D2PAK |
|
SI1480DH-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 2.6A SC70-6 |