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FDP51N25

FDP51N25

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Part No :

FDP51N25

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 250V 51A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
192320000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
FDP51N25 PDF
Type Description
Series:UniFET™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:51A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3410 pF @ 25 V
FET Feature:-
Power Dissipation (Max):320W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FDP51N25 is available at GangBo-ic.com, Please review product page below for detailed information, including FDP51N25 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDP51N25 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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