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IRFB4110GPBF

IRFB4110GPBF

MOSFET N-CH 100V 120A TO220AB

IRFB4110GPBF

IRFB4110GPBF

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Part No :

IRFB4110GPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 120A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
316331 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IRFB4110GPBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:210 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9620 pF @ 50 V
FET Feature:-
Power Dissipation (Max):370W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRFB4110GPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFB4110GPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFB4110GPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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