MOSFET N-CHANNEL 600V 4A TO252
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 900mOhm @ 1.2A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.6 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 315 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 36.8W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252, (D-Pak) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIR164DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8 |
|
RM7N600IPRectron USA |
MOSFET N-CHANNEL 600V 7A TO251 |
|
IRFZ24PBFVishay / Siliconix |
MOSFET N-CH 60V 17A TO220AB |
|
SIR640ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 41.6A/100A PPAK |
|
IPLU300N04S4R8XTMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 300A 8HSOF |
|
FDMA86265PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 1A 6MICROFET |
|
HUF76132S3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTGS4141NT1Rochester Electronics |
MOSFET N-CH 30V 3.5A 6TSOP |
|
IRFU4105ZPBF-IRRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
FDS7096N3Rochester Electronics |
MOSFET N-CH 30V 14A 8SOIC |
|
IRF730BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK3984-ZK-E1-AYRochester Electronics |
MOSFET N-CH 100V 18A TO252 |
|
TSM4N90CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 900V 4A ITO220AB |