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FCPF190N65S3R0L

FCPF190N65S3R0L

MOSFET N-CH 650V 17A TO220F-3

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FCPF190N65S3R0L

FCPF190N65S3R0L

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Part No :

FCPF190N65S3R0L

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 17A TO220F-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
23000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
FCPF190N65S3R0L PDF
Type Description
Series:SuperFET® III
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.35 pF @ 400 V
FET Feature:-
Power Dissipation (Max):144W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3
Package / Case:TO-220-3 Full Pack
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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