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IPN80R3K3P7ATMA1

IPN80R3K3P7ATMA1

MOSFET N-CH 800V 1.9A SOT223

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IPN80R3K3P7ATMA1

IPN80R3K3P7ATMA1

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Part No :

IPN80R3K3P7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 800V 1.9A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10146 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
IPN80R3K3P7ATMA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.3Ohm @ 590mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:5.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:120 pF @ 500 V
FET Feature:-
Power Dissipation (Max):6.1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:TO-261-3
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