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FQB7N60TM

FQB7N60TM

MOSFET N-CH 600V 7.4A D2PAK

AMF-5F-06001900-60-25P-S

AMF-5F-06001900-60-25P-S

AMPLIFIER

FQB7N60TM

FQB7N60TM

Image is for reference, please contact us to get the real picture

Part No :

FQB7N60TM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 600V 7.4A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
5235600 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
FQB7N60TM PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1430 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 142W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB7N60TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQB7N60TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQB7N60TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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