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SPI21N10

SPI21N10

MOSFET N-CH 100V 21A TO262-3

SPI21N10

SPI21N10

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Part No :

SPI21N10

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 21A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11193 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
SPI21N10 PDF
Type Description
Series:SIPMOS®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:80mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 44µA
Gate Charge (Qg) (Max) @ Vgs:38.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:865 pF @ 25 V
FET Feature:-
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
SPI21N10 is available at GangBo-ic.com, Please review product page below for detailed information, including SPI21N10 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SPI21N10 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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