MOSFET N-CH 200V 580A SP6
Type | Description |
---|---|
Series: | POWER MOS 7® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 580A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3.6mOhm @ 290A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 15mA |
Gate Charge (Qg) (Max) @ Vgs: | 840 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 43300 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2270W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Supplier Device Package: | SP6 |
Package / Case: | SP6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BUK7628-55A/C1118Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BUK625R0-40C,118Rochester Electronics |
PFET, 90A I(D), 40V, 0.0083OHM, |
|
AOD7S65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 7A TO252 |
|
DMN4035L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 4.6A SOT23 |
|
FQD2N60TFRochester Electronics |
MOSFET N-CH 600V 2A DPAK |
|
IRL540SPBFVishay / Siliconix |
MOSFET N-CH 100V 28A D2PAK |
|
BSC014N04LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 32/100A SUPERSO8 |
|
IXTA100N15X4Wickmann / Littelfuse |
MOSFET N-CH 150V 100A TO263AA |
|
FCH043N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 75A TO247-3 |
|
BUK6Y19-30PXNexperia |
MOSFET P-CH 30V 45A LFPAK56 |
|
DMP2006UFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 17.5A POWERDI |
|
IXTA1R4N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 1.4A TO263 |
|
FDMC86260Sanyo Semiconductor/ON Semiconductor |
MOSFET N CH 150V 5.4A POWER 33 |