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FQD2N60TF

FQD2N60TF

MOSFET N-CH 600V 2A DPAK

FQD2N60TF

FQD2N60TF

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Part No :

FQD2N60TF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 2A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17387 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
FQD2N60TF PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
FQD2N60TF is available at GangBo-ic.com, Please review product page below for detailed information, including FQD2N60TF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQD2N60TF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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