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IRFHM8337TRPBF

IRFHM8337TRPBF

IRFHM8337 - HEXFET POWER MOSFET

FN2060B-16-06

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IRFHM8337TRPBF

IRFHM8337TRPBF

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Part No :

IRFHM8337TRPBF

Manufacturer
Rochester Electronics
Description
IRFHM8337 - HEXFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
706070 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IRFHM8337TRPBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12.4mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:8.1 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:755 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (3.3x3.3), Power33
Package / Case:8-PowerTDFN
IRFHM8337TRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFHM8337TRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFHM8337TRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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