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TSM4N80CI C0G

TSM4N80CI C0G

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Part No :

TSM4N80CI C0G

Manufacturer
TSC (Taiwan Semiconductor)
Description
MOSFET N-CH 800V 4A ITO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
836083 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
TSM4N80CI C0G PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:955 pF @ 25 V
FET Feature:-
Power Dissipation (Max):38.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ITO-220AB
Package / Case:TO-220-3 Full Pack, Isolated Tab
TSM4N80CI C0G is available at GangBo-ic.com, Please review product page below for detailed information, including TSM4N80CI C0G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TSM4N80CI C0G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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