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IMW120R045M1XKSA1

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SICFET N-CH 1.2KV 52A TO247-3

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IMW120R045M1XKSA1

IMW120R045M1XKSA1

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Part No :

IMW120R045M1XKSA1

Manufacturer
IR (Infineon Technologies)
Description
SICFET N-CH 1.2KV 52A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10251 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
Type Description
Series:CoolSiC™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1.2 kV
Current - Continuous Drain (Id) @ 25°C:52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id:5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 15 V
Vgs (Max):+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1.9 nF @ 800 V
FET Feature:-
Power Dissipation (Max):228W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-41
Package / Case:TO-247-3
IMW120R045M1XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IMW120R045M1XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IMW120R045M1XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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