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IRFU3607TRL701P

IRFU3607TRL701P

HEXFET POWER MOSFET

SIGC18T60SNCX7SA1

SIGC18T60SNCX7SA1

IGBT 3 CHIP 600V WAFER

IRFU3607TRL701P

IRFU3607TRL701P

Image is for reference, please contact us to get the real picture

Part No :

IRFU3607TRL701P

Manufacturer
Rochester Electronics
Description
HEXFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15319 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
PDF
IRFU3607TRL701P PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:84 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3.07 pF @ 50 V
FET Feature:-
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:IPAK (TO-251)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
IRFU3607TRL701P is available at GangBo-ic.com, Please review product page below for detailed information, including IRFU3607TRL701P price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFU3607TRL701P to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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