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IRF1010ESTRLPBF

IRF1010ESTRLPBF

MOSFET N-CH 60V 84A D2PAK

4697-2520-AL

4697-2520-AL

1/2 HEX X 2.00 LENGTH

IRF1010ESTRLPBF

IRF1010ESTRLPBF

Image is for reference, please contact us to get the real picture

Part No :

IRF1010ESTRLPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 84A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
515851 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
PDF
IRF1010ESTRLPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:84A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3210 pF @ 25 V
FET Feature:-
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF1010ESTRLPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF1010ESTRLPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF1010ESTRLPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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