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SI8425DB-T1-E1

SI8425DB-T1-E1

MOSFET P-CH 20V 4WLCSP

SI8425DB-T1-E1

SI8425DB-T1-E1

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Part No :

SI8425DB-T1-E1

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 4WLCSP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12950 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
SI8425DB-T1-E1 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:23mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:2800 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.1W (Ta), 2.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-WLCSP (1.6x1.6)
Package / Case:4-UFBGA, WLCSP
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