MOSFET N-CH 20V 3A SOT23
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 72mOhm @ 3.6A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 10 nC @ 4.5 V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 237 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 1.25W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPD50N06S4L12ATMA1Rochester Electronics |
MOSFET N-CH 60V 50A TO252-31 |
|
HUF75829D3Rochester Electronics |
MOSFET N-CH 150V 18A IPAK |
|
SSM3J332R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 6A SOT23F |
|
BSC098N10NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 60A TDSON |
|
PSMN015-60PS,127Nexperia |
MOSFET N-CH 60V 50A TO220AB |
|
STL225N6F7AGSTMicroelectronics |
MOSFET N-CH 60V 120A POWERFLAT |
|
SQJQ480E-T1_GE3Vishay / Siliconix |
MOSFET N-CH 80V 150A PPAK 8 X 8 |
|
IRFBC40SPBFVishay / Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
|
DMN4010LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 11.5A PWRDI3333 |
|
DMNH10H028SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 55A TO252 |
|
IXTP12N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 12A TO220 |
|
IXFA6N120P-TRLWickmann / Littelfuse |
MOSFET N-CH 1200V 6A TO263 |
|
IRFS4410TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 88A D2PAK |