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SCT10N120

SCT10N120

SICFET N-CH 1200V 12A HIP247

SCT10N120

SCT10N120

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Part No :

SCT10N120

Manufacturer
STMicroelectronics
Description
SICFET N-CH 1200V 12A HIP247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
755575 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
PDF
SCT10N120 PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 400 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3
SCT10N120 is available at GangBo-ic.com, Please review product page below for detailed information, including SCT10N120 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SCT10N120 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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