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IAUT260N10S5N019ATMA1

IAUT260N10S5N019ATMA1

MOSFET N-CH 100V 260A 8HSOF

IAUT260N10S5N019ATMA1

IAUT260N10S5N019ATMA1

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Part No :

IAUT260N10S5N019ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 260A 8HSOF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
685568 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
IAUT260N10S5N019ATMA1 PDF
Type Description
Series:OptiMOS™-5
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:260A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.8V @ 210µA
Gate Charge (Qg) (Max) @ Vgs:166 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11830 pF @ 50 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-1
Package / Case:8-PowerSFN
IAUT260N10S5N019ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IAUT260N10S5N019ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IAUT260N10S5N019ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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