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IPD30N08S222ATMA1

IPD30N08S222ATMA1

MOSFET N-CH 75V 30A TO252-3

IPD30N08S222ATMA1

IPD30N08S222ATMA1

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Part No :

IPD30N08S222ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 75V 30A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 06 - Nov 10 2024
PDF
IPD30N08S222ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:21.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.4 pF @ 25 V
FET Feature:-
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD30N08S222ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD30N08S222ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD30N08S222ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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