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IRLML6302TRPBF

IRLML6302TRPBF

MOSFET P-CH 20V 780MA SOT23

FGA30N65SMD

FGA30N65SMD

INSULATED GATE BIPOLAR TRANSISTO

IRLML6302TRPBF

IRLML6302TRPBF

Image is for reference, please contact us to get the real picture

Part No :

IRLML6302TRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 20V 780MA SOT23
Catalog
Transistors - FETs, MOSFETs - Single
Availability
68464 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IRLML6302TRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:780mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
Rds On (Max) @ Id, Vgs:600mOhm @ 610mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.6 nC @ 4.45 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:97 pF @ 15 V
FET Feature:-
Power Dissipation (Max):540mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro3™/SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
IRLML6302TRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRLML6302TRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRLML6302TRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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