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IPA65R650CEXKSA1

IPA65R650CEXKSA1

MOSFET N-CH 650V 7A TO220

IPA65R650CEXKSA1

IPA65R650CEXKSA1

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Part No :

IPA65R650CEXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 7A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10897 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 31 - Jan 04 2024
PDF
IPA65R650CEXKSA1 PDF
Type Description
Series:CoolMOS™ CE
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 100 V
FET Feature:-
Power Dissipation (Max):28W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220 Full Pack
Package / Case:TO-220-3 Full Pack
IPA65R650CEXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPA65R650CEXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPA65R650CEXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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