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IPI084N06L3GXKSA1

IPI084N06L3GXKSA1

MOSFET N-CH 60V 50A TO262-3

IPI084N06L3GXKSA1

IPI084N06L3GXKSA1

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Part No :

IPI084N06L3GXKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 50A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
119500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 02 - Jan 06 2025
PDF
IPI084N06L3GXKSA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:8.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.2V @ 34µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4900 pF @ 30 V
FET Feature:-
Power Dissipation (Max):79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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