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SI3458BDV-T1-GE3

SI3458BDV-T1-GE3

MOSFET N-CH 60V 4.1A 6TSOP

DD26S1S50V3X/AA

DD26S1S50V3X/AA

CONN D-SUB HD RCPT 26POS CRIMP

SI3458BDV-T1-GE3

SI3458BDV-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SI3458BDV-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 60V 4.1A 6TSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10805 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 22 - Feb 26 2025
PDF
SI3458BDV-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2W (Ta), 3.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
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