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BSC009NE2LS5IATMA1

BSC009NE2LS5IATMA1

MOSFET N-CH 25V 40A/100A TDSON

BSC009NE2LS5IATMA1

BSC009NE2LS5IATMA1

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Part No :

BSC009NE2LS5IATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 40A/100A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
275327 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
BSC009NE2LS5IATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:40A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:3200 pF @ 12 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
BSC009NE2LS5IATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSC009NE2LS5IATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSC009NE2LS5IATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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