MOSFET N-CH 80V 40A 8TSDSON
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80 V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 7.5mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3.8V @ 36µA |
Gate Charge (Qg) (Max) @ Vgs: | 29.5 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2080 pF @ 40 V |
FET Feature: | - |
Power Dissipation (Max): | 69W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TSDSON-8 |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI3457DVSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 4A SUPERSOT6 |
|
IXTA80N075L2Wickmann / Littelfuse |
MOSFET N-CH 75V 80A TO263AA |
|
IRFU330BTURochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFS634BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF3709SPBFRochester Electronics |
HEXFET SMPS POWER MOSFET |
|
SIR494DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 60A PPAK SO-8 |
|
BUK7M42-60EXNexperia |
MOSFET N-CH 60V 20A LFPAK33 |
|
IPA65R310CFDXKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 11.4A TO220 |
|
MMDF2N05ZR2Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SIE818DF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 75V 60A 10POLARPAK |
|
HAT2279N-EL-ERochester Electronics |
MOSFET N-CH 80V 30A 8LFPAK |
|
BSC009NE2LS5IATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 40A/100A TDSON |
|
FQPF11N40CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 10.5A TO220F |