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RQ6C050UNTR

RQ6C050UNTR

MOSFET N-CH 20V 5A TSMT6

RQ6C050UNTR

RQ6C050UNTR

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Part No :

RQ6C050UNTR

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 20V 5A TSMT6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11030 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 29 - Jan 02 2024
PDF
RQ6C050UNTR PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:30mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.25W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TSMT6 (SC-95)
Package / Case:SOT-23-6 Thin, TSOT-23-6
RQ6C050UNTR is available at GangBo-ic.com, Please review product page below for detailed information, including RQ6C050UNTR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RQ6C050UNTR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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