Type | Description |
---|---|
Series: | * |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | Surface Mount |
Supplier Device Package: | DFN2020MD-6 |
Package / Case: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FQI5N80TURochester Electronics |
MOSFET N-CH 800V 4.8A I2PAK |
|
RD3P050SNTL1ROHM Semiconductor |
MOSFET N-CH 100V 5A TO252 |
|
IPS65R1K0CEAKMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 7.2A TO251-3 |
|
TSM220NB06CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 8A/35A 8PDFN |
|
DMNH6042SPD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 25A PWRDI5060 |
|
STB200N6F3STMicroelectronics |
MOSFET N-CH 60V 120A D2PAK |
|
IRFR540ZTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 35A DPAK |
|
STL12P6F6STMicroelectronics |
MOSFET P-CH 60V 4A POWERFLAT |
|
NVD5802NT4G-VF01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 16.4A/101A DPAK |
|
TSM70N1R4CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 3.3A TO252 |
|
NTGS3443BT1GRochester Electronics |
MOSFET P-CH 20V 2.7A 6TSOP |
|
AUIRF1404SRochester Electronics |
MOSFET N-CH 40V 75A D2PAK |
|
FQP9P25Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 250V 9.4A TO220-3 |