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IPS65R1K0CEAKMA2

IPS65R1K0CEAKMA2

MOSFET N-CH 650V 7.2A TO251-3

IPS65R1K0CEAKMA2

IPS65R1K0CEAKMA2

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Part No :

IPS65R1K0CEAKMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 7.2A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
685268 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 27 - Dec 31 2024
PDF
IPS65R1K0CEAKMA2 PDF
Type Description
Series:CoolMOS™ CE
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:15.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:328 pF @ 100 V
FET Feature:-
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3-342
Package / Case:TO-251-3 Stub Leads, IPak
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