MOSFET N-CH 60V 20A TO252AA
Type | Description |
---|---|
Series: | UltraFET™ |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 49mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20 nC @ 10 V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 645 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 60W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252AA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
UPA2751GR-E1-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
NIF9N05CLT3G-SYRochester Electronics |
2.6 A, 52 V, N-CHANNEL, LOGIC LE |
|
EPC2020EPC |
GANFET N-CH 60V 90A DIE |
|
IPZ60R099C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 22A TO247-4 |
|
STW69N65M5-4STMicroelectronics |
MOSFET N-CH 650V 58A TO247-4L |
|
TPH6R30ANL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 66A/45A 8SOP |
|
FCH041N65EF-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 76A TO247 |
|
NTMFS5832NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 20A/111A 5DFN |
|
TK31E60X,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 30.8A TO220 |
|
IXFN170N25X3Wickmann / Littelfuse |
MOSFET N-CH 250V 170A SOT227B |
|
SK8603140LPanasonic |
MOSFET N-CH 30V 25A 8HSO |
|
IXFH52N30PWickmann / Littelfuse |
MOSFET N-CH 300V 52A TO247AD |
|
STP52N25M5STMicroelectronics |
MOSFET N-CH 250V 28A TO220 |