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NTMFS5832NLT1G

NTMFS5832NLT1G

MOSFET N-CH 40V 20A/111A 5DFN

P2439

P2439

NUT HEX NICKEL-PLATED BRASS

041-11-33-211

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PHOTODIODE LOCAP 1.0X0.8MM TO-46

TMS320F28374DPTPS

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NTMFS5832NLT1G

NTMFS5832NLT1G

Image is for reference, please contact us to get the real picture

Part No :

NTMFS5832NLT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 40V 20A/111A 5DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10236 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
NTMFS5832NLT1G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta), 111A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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