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IPI65R190CFDXKSA2

IPI65R190CFDXKSA2

MOSFET N-CH 650V 17.5A TO262-3

IPI65R190CFDXKSA2

IPI65R190CFDXKSA2

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Part No :

IPI65R190CFDXKSA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 17.5A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
115111 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2024
Type Description
Series:CoolMOS™ CFD2
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1850 pF @ 100 V
FET Feature:-
Power Dissipation (Max):151W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IPI65R190CFDXKSA2 is available at GangBo-ic.com, Please review product page below for detailed information, including IPI65R190CFDXKSA2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPI65R190CFDXKSA2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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