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FCP190N65F

FCP190N65F

MOSFET N-CH 650V 20.6A TO220-3

FCP190N65F

FCP190N65F

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Part No :

FCP190N65F

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 20.6A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
18800 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 29 - Jan 02 2024
PDF
FCP190N65F PDF
Type Description
Series:FRFET®, SuperFET® II
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:78 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3.225 pF @ 25 V
FET Feature:-
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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