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IHLP2525CZER5R6M51

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FQD4P25TM-WS

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MOSFET P-CH 250V 3.1A DPAK

43-05116

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CONN T-ADPT 5P-5/5P F-F/M INLINE

FQD4P25TM-WS

FQD4P25TM-WS

Image is for reference, please contact us to get the real picture

Part No :

FQD4P25TM-WS

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 250V 3.1A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
FQD4P25TM-WS PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.1Ohm @ 1.55A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:420 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
FQD4P25TM-WS is available at GangBo-ic.com, Please review product page below for detailed information, including FQD4P25TM-WS price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQD4P25TM-WS to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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