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Y00076K35520T0L

Y00076K35520T0L

RES 6.3552K OHM 0.6W 0.01% RAD

IPB083N15N5LFATMA1

IPB083N15N5LFATMA1

MOSFET N-CH 150V 105A D2PAK

IPB083N15N5LFATMA1

IPB083N15N5LFATMA1

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Part No :

IPB083N15N5LFATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 150V 105A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
835083 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
PDF
IPB083N15N5LFATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:105A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4.9V @ 134µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:210 pF @ 75 V
FET Feature:-
Power Dissipation (Max):179W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB083N15N5LFATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB083N15N5LFATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB083N15N5LFATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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