Type | Description |
---|---|
Series: | PolarP2™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 270mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 48 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 2890 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 480W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3P |
Package / Case: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IXTQ96N15PWickmann / Littelfuse |
MOSFET N-CH 150V 96A TO3P |
|
STF35N60DM2STMicroelectronics |
MOSFET N-CH 600V 28A TO220FP |
|
IPD30N06S4L23ATMA1Rochester Electronics |
MOSFET N-CH 60V 30A TO252-3 |
|
IPB120N08S403ATMA1Rochester Electronics |
MOSFET N-CH 80V 120A TO263-3-2 |
|
IPW65R150CFDFKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 22.4A TO247-3 |
|
SIHB100N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 30A D2PAK |
|
DMT6007LFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 15A PWRDI3333 |
|
SIHFS11N50A-GE3Vishay / Siliconix |
MOSFET N-CH 500V 11A TO263 |
|
STQ1HNK60R-APSTMicroelectronics |
MOSFET N-CH 600V 400MA TO92-3 |
|
TK60P03M1,RQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 60A DPAK |
|
TSM4NB60CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 4A TO251 |
|
SPP02N60C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
AO7407Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 1.2A SC70-3 |