N-CHANNEL POWER MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
2SJ646-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
SSM3K361R,LXHFToshiba Electronic Devices and Storage Corporation |
AECQ MOSFET NCH 100V 3.5A SOT23F |
|
NTMFS4965NFT1GRochester Electronics |
MOSFET N-CH 30V 17.5A/65A 5DFN |
|
IRFP150NPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 42A TO247AC |
|
SQJA46EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
PSMN013-100ES,127Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
TK100S04N1L,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 100A DPAK |
|
SPU02N60S5BKMA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
BUK7510-100B,127Rochester Electronics |
PFET, 75A I(D), 100V, 0.01OHM, 1 |
|
IRLR3110ZTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 42A DPAK |
|
RJK1054DPB-00#J5Renesas Electronics America |
MOSFET N-CH 100V 20A LFPAK |
|
FK4B01110L1Panasonic |
MOSFET N-CH 12V 2.3A ALGA004 |
|
R6020ENZ1C9ROHM Semiconductor |
MOSFET N-CH 600V 20A TO247 |