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PSMN013-100ES,127

PSMN013-100ES,127

POWER FIELD-EFFECT TRANSISTOR, 6

PSMN013-100ES,127

PSMN013-100ES,127

Image is for reference, please contact us to get the real picture

Part No :

PSMN013-100ES,127

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13989 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
PSMN013-100ES,127 PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:68A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3.195 pF @ 50 V
FET Feature:-
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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