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RM6N100S4V

RM6N100S4V

MOSFET N-CH 100V 6A SOT223-3

RM6N100S4V

RM6N100S4V

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Part No :

RM6N100S4V

Manufacturer
Rectron USA
Description
MOSFET N-CH 100V 6A SOT223-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
385038 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:140mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:690 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-3
Package / Case:TO-261-4, TO-261AA
RM6N100S4V is available at GangBo-ic.com, Please review product page below for detailed information, including RM6N100S4V price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM6N100S4V to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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