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BSR302NL6327HTSA1

BSR302NL6327HTSA1

OPTIMOS POWER-TRANSISTOR

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BSR302NL6327HTSA1

BSR302NL6327HTSA1

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Part No :

BSR302NL6327HTSA1

Manufacturer
Rochester Electronics
Description
OPTIMOS POWER-TRANSISTOR
Catalog
Transistors - FETs, MOSFETs - Single
Availability
515051 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
BSR302NL6327HTSA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:23mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id:2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:6.6 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:750 pF @ 15 V
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SC-59
Package / Case:TO-236-3, SC-59, SOT-23-3
BSR302NL6327HTSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSR302NL6327HTSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSR302NL6327HTSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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