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FQI50N06LTU

FQI50N06LTU

MOSFET N-CH 60V 52.4A I2PAK

FQI50N06LTU

FQI50N06LTU

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Part No :

FQI50N06LTU

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 52.4A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11730 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 24 - Dec 28 2024
PDF
FQI50N06LTU PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:52.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:21mOhm @ 26.2A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.63 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.75W (Ta), 121W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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